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ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 1/1 1 FTP10N40/ft a10n40 400v n-channel mosfet general features ? lo w on resistan ce ? lo w gat e char g e (t yp ical 34n c) ? fast switching ? 100% a v al anc h e t e st ed ? rohs com p liant /lea d free applications ? high efficiency smps ? adapt o r/c h ar ger ? lcd panel power ? sw itchi ng ap p lica t i on ordering information part number package marking FTP10N40 to-220 FTP10N40 fta10n40 to-220f fta10n40 absolute maximum ratings t c =25 unless oth e rw ise spec ified symbol para meter ftp1 0n 40 fta 10n 4 0 u n it v dss drain-to-source voltage [1] 400 v i d continuous drain current 10 10* i d @100 continuous drain current figure 3 i dm pulsed drain current , v gs @10v [2] figure 6 a power dissipation 125 31 w p d derating factor above 25 1.0 0.25 w/ v gs gate-to-source voltage 30 v e as singl e pulse avala n c h e energy l=7.2m h, i d =10a 36 0 m j dv/dt peak diode recovery dv/dt [3] 4.5 v/ns t l solder ing te m p erature distanc e of 1. 6 m m fro m case for 10 se conds 3 0 0 t j an d t stg operati n g and storage tem p erat ure r a nge -55 t o 150 *drain current limited by ma ximum junction temperature. caution: s t resses greater than th ose listed in th e ?absolut e ma ximum ratings? may cause pe rman ent damage to th e de vi ce. thermal characteristics symbol parameter ftp06n40 fta06n40 unit r jc thermal resistance, junction-to-case 1.0 4.0 r ja therm a l resistance, jun c tion-to -am b ien t 65 65 /w bv dss r ds(on) (max.) i d 400v 0.50 ? 10a http://
ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 2/1 1 FTP10N40/ft a10n40 electrical characteristics off characteristics t c =25 unless otherwise specif i ed symbol parameter min. typ. ma x . unit test co nditions bv dss drain-to-source bre a kdown volta ge 400 -- -- v v gs =0v, i d =2 50a bv dss / t j breakdown volt age tem p erature coefficient -- 0.6 -- v/ reference to 25 , i d =250a -- -- 12 v ds =400v, v gs =0v i dss drain-to-source le akage c u rrent -- -- 100 a v ds =320v , v gs =0v, t c =125 -- -- 100 v gs =+30v i gss ga t e -t o - sou r ce le ak ag e c u rre n t -- -- -100 na v gs =-30v on characteristics t c =25 un less otherwise specif i ed symbol parameter min. typ. ma x . unit test co nditions r ds(on) static d r ain-t o -source o n -resist a nc e -- 0.4 3 0.5 0 ? v gs =10v , i d =6 . 0 a [4 ] v gs(th) g a te t h resho l d v o l t ag e 2.0 -- 4.0 v v ds = v gs , i d =250a gfs forw ard tran scon du cta n ce -- 10. 5 -- s v ds =15v , i d =10a [4 ] dynamic characteristics essentially ind e penden t of oper a ting temper atur e symbol parameter min. typ. max. unit test conditions c iss inpu t ca pa cit a nce -- 11 38 -- c oss output c a paci tance -- 11 9 -- c rss reverse trans f er capa ci tanc e -- 24 -- pf v gs =0v v ds =25v f=1.0mh z figure 14 q g tota l gat e c h arge -- 34 -- q gs g a te-to-so urc e ch arge -- 3 -- q gd gate-to-drain (miller) charge -- 12. 4 -- nc v dd =200v i d =10a figure 15 resistive sw itching characteristics essentially independent of op era ting t e m peratu r e symbol parameter min. typ. max. unit test conditions t d ( on) turn-on delay ti m e -- 31 -- t rise rise t i m e -- 91 -- t d(off) turn-off delay ti m e -- 44 -- t fall fall t i m e -- 55 -- ns v dd =200v i d =10a v gs =10v r g =20 ?
ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 3/1 1 FTP10N40/ft a10n40 source-drain diode characteristics t c =25 unless otherwise specif i ed symbol parameter min typ. ma x . units t est co nditions i sd con t i n u ous s ource curre nt (body d i ode) -- -- 10 a i sm maxi m u m p u lsed curren t ( b o d y d i ode) -- -- 4 0 a integra l p-n d i od e i n mosfet v sd diode forward voltage -- -- 1.2 v i s =10a, v gs =0v t rr reverse recovery time -- 247 -- ns q rr reverse re co very char ge -- 15 40 -- nc v gs =0v i f =10a,di/dt=100a/s note [1] t j =+ 25 to + 1 5 0 [2] r e p e ti ti ve ratin g, pu lse w i dth lim ited by m a xim u m junc ti on tem p erature. [3] i sd = 10a , di/ d t 1 00a /s , v dd bv dss , t j =+ 150 [4] p u lse w i dt h 38 0s; du t y cycl e 2% .
ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 4/1 1 FTP10N40/ft a10n40 f i g ur e 1 . m ax i m um e f f ec t i ve t h e r m al i m pe danc e, j un c t i on - t o- c as e 0.001 0.01 0. 1 1 1. 0 e - 0 6 1 . 0 e- 05 1. 0e - 0 4 1 . 0 e - 03 1. 0e - 0 2 1 . 0 e - 01 1. 0 e + 0 0 1 . 0 e + 01 t p , r e c t a n g u l a r p u l s e d u ra ti o n (s ) z jc , t h e r m a l i m ped ance( n o r m al i z ed ) single pulse 1% 2% 5% 10% 20% 50 % f i g u r e 2. m axi m u m p o w e r d i ssi p at i o n v s. c ase te m p e r a t u r e 0 20 40 60 80 100 120 140 25 50 75 100 1 2 5 150 t c , c as e t em per at ur e ( ) p d , p o w e r d i s s i pat ion ( w ) figure 3. maximu m c o n t in uo us d r a i n c u r r e nt v s c ase t e m p e r at u r e 0. 0 2. 0 4. 0 6. 0 8. 0 10. 0 12. 0 25 50 75 100 125 150 t c , c a s e t em per at ur e ( ) i d , d r ain c u r r ent ( a ) figure 4. typical o u t p u t c h ar act e r i st i cs 0 10 20 30 40 50 0 1 02 0 3 04 0 5 0 v ds , d r ain- t o - s our c e v o lt age( v ) i d , d r ain c u r r ent ( a ) v g s = 4. 0v v g s = 4. 5v v g s = 5. 0v v g s = 5. 5v v g s = 6. 5v vg s = 1 5 v vg s = 1 0 v f i g u r e 5. t y p i cal d r ai n - t o - s o u r ce o n r e si st an ce v s. g at e v o l t ag e an d d r ai n c u r r e n t 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 4 6 8 10 12 14 16 18 20 v gs , gat e -t o- s our c e v o l t age( v ) r ds ( o n ) , d r ai n-t o - s our c e on re sist a n c e ( o h m ) id=5a id=10a
ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 5/1 1 FTP10N40/ft a10n40 fi g u r e 6. m a xi m u m p e a k c u r r e n t c a pabi l i t y 1 10 10 0 0. 00 00 1 0. 00 01 0 . 00 1 0 . 01 0. 1 1 1 0 t p , p u l s e w i d th ( s ) i dm , p eak c ur r ent ( a ) transconduc t anc e m ay l i m i t c ur r en t i n t hi s r egi on f i gure 7. typ i cal t r an sf e r c h ar act e r i st i cs 0 5 10 15 20 25 30 35 345678 v gs , g a t e - t o- s our c e v o lt age, ( v ) i d , d r ain- t o - s our c e c u r r ent ( a ) -5 5 25 15 0 figure 8 . u n c l a m pe d induc t iv e s w it c h ing c a pa bilit y 0. 1 1 10 100 1. e - 06 1. e - 05 1. e - 04 1. e - 03 1. e - 02 1. e - 01 t av , t i m e in a v alanc he( s ) i as , a v alanc he c u r r ent ( a ) starting tj=25 s t a r t i ng t j = 1 50 f i g u r e 9. t ypical d r ai n - t o - s o u r ce o n r e si st an ce 0. 35 0. 4 0. 45 0. 5 0. 55 0. 6 0 5 10 15 20 i d , d r ai n c u rr ent (a ) r ds ( o n ) , d r ai n-t o - s our c e on re sist a n c e ( o h m ) vgs=1 0 v vgs=2 0 v f i g u r e 10. t y p i cal d r ai n - t o - s o u r ce o n r e si st an ce v s . j u nc t i on t e m p e r a t ur e 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 1. 8 2. 0 2. 2 2. 4 - 75 - 50 - 25 0 25 50 75 100 125 150 t j , j unc t i on t e m per at ure ( ) r ds ( o n ) , d r ai n-t o - s our c e r e s i s t anc e ( n orm a l i z ed)
ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 6/1 1 FTP10N40/ft a10n40 figure 11.typical breakdown voltage vs. junction temperature 0. 90 0. 95 1. 00 1. 05 1. 10 1. 15 1. 20 -75 - 50 -25 0 25 50 75 100 125 150 t j , j unc t i on t e m perat ur e ( ) bv ds s , d r ai n- t o -s ourc e b r eak dow n v o l t age ( n orm a l i z e d ) f i g u r e 12. t y p i cal t h r e sh o l d v o l t ag e v s. ju n ct i o n te m p e r a t u r e 0.6 0. 7 0. 8 0. 9 1. 0 1. 1 1. 2 1. 3 -50 - 25 0 2 5 5 0 7 5 100 125 150 t j , j unc t i on t e m per at ure ( ) v gs ( t h ) t hr es hol d v ol t age ( n orm a l i z ed) f i g u r e 13. m axi m u m f o r w ar d s af e o p e r at i o n a r e a 0.1 1 10 100 10 100 1000 v ds , d r ain- t o - s our c e v o lt age( v ) i d , d r ain c u r r ent ( a ) dc 10ms 1ms 10 0u s 10 us o pe r at in g in t hi s ar e a m ay b e li m i t e d by r d s(o n ) figure 14. t y p i cal c ap aci t an ce v s. d r ai n - t o - s o u r ce vo l t a g e 1 10 100 1000 10000 0. 01 0. 1 1 10 100 1000 v ds , d r ain v o lt age( v ) c , c apac it anc e( pf ) ciss coss crss fig u r e 15. t y p i cal g at e c h ar g e v s. g at e - t o - s o u r ce vo l t a g e 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 q g , g a t e c har ge( nc ) v gs . g a t e - t o- s our c e v o lt age( v ) figure 16. typical body di o d e t r an sf e r c h ar act e r i st i cs 0 5 10 15 20 25 30 35 40 0. 25 0. 5 0. 75 1 1. 25 1. 5 v sd , s our c e - t o- d r ain v o lt age( v ) i sd , r e v e r s e d r ain c u r r ent ( a ) 15 0 25 -5 5
ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 7/1 1 FTP10N40/ft a10n40 t e st cir c uit
ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 8/1 1 FTP10N40/ft a10n40
ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 9/1 1 FTP10N40/ft a10n40 pack age dimensions
ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 10/1 1 FTP10N40/ft a10n40
ark mi cro e l e c t roni cs co ., ltd. www .a r k -mi c r o .c om r e v . 2. 0 m ar . 2 0 0 9 11 / 11 FTP10N40/ft a10n40 published by ark micr oelectr onics co., ltd. no.9, east z i jing road, high-tek di strict, chengdu, p . r. china all rights reserved. disclaimers a r k m i c r o e l e c t r o n i c s c o . , l t d . reserves t h e ri g h t t o m a ke c h an ge wi th ou t n o ti ce i n o r der to im pro v e relia bil ity , fun c ti on or d e si g n a nd to d i sco n ti nu e a n y pr od uct or ser v i ce w i t h o u t n o tice . c u st o m ers shou ld o b ta in the l a tes t re le van t inform ation bef o re ord e rs an d sho u l d verify that such in form ation is curre nt and c o m p lete. all prod ucts are s o ld su bject to a r k m i c r o e l e c t r o n i c s c o . , l t d ? s term s and co nd iti ons s u p p l i e d a t t h e tim e of order a c k now l e dg em ent. a r k m i c r o e l e c t r o n i c s c o . , l t d . w a rrants perfor m ance of its hardw a re pro duc ts to th e s p ec ifica t i ons at the tim e of sale, t esti n g , rel i a b il ity a n d q u a lity c o n t rol ar e us ed to t h e ex te nt a r k m i c r o e l e c t r o n i c s c o . , l t d deem s necess a ry to s u pport this warra nt e e . e x ce pt w h ere a g reed upon by co ntra c t ua l a g reem ent, t e sti n g of a l l param e ters of each product i s not necessar y perform ed. a r k m i c r o e l e c t r o n i c s c o . , l t d . does not assum e any lia bil ity ari s ing from the use of a n y pr od uct or circ u i t desi gns d e sc ribed herein. cust o m ers are respo n si b l e for th eir prod ucts a nd a p p lic ati o ns usi ng a r k m i c r o e l e c t r o n i c s c o . , l t d ? s co m pone nts. t o m i nim i ze risk, c u stom ers m u st prov ide ad e qua te desi gn and opera ti ng s a fe guar d s. a r k m i c r o e l e c t r o n i c s c o . , l t d . does not w a rra nt or con v ey a n y li cense ei ther e xpresse d or i m plied un der its pat e nt rig h ts, nor t h e ri gh ts of ot hers. r e prod uct i o n of inform ation i n a r k m i c r o e l e c t r o n i c s c o . , l t d ? s data sheets or d a ta bo oks is perm issibl e o n ly if reprod uc tion i s w itho u t m odifica tio n or al t erati on. re pro ducti on of t h is inform ation w ith any al tera ti on is an unfa i r and de cep ti ve busi n ess prac tice . a r k m i c r o e l e c t r o n i c s c o . , l t d is not resp onsi b l e or l i a b le for such al tered d o cum e ntat io n. resal e of a r k m i c r o e l e c t r o n i c s c o . , l t d ? s produ ct s w ith sta t em ents dif f ere n t f r o m or bey o n d t h e param e ters state d by a r k m i c r o e l e c t r o n i c s c o . , l t d . for the pr od uct or servi ce v o ids all ex press or im plied w a rrant ees for the asso cia t ed a r k m i c r o e l e c t r o n i c s c o . , l t d ? s prod uct or s e rvice an d is unfair an d de cep tiv e busi n ess pract ice . a r k m i c r o e l e c t r o n i c s c o . , l t d is not res p onsible or l i a b le f o r a n y such st atem ents. life support policy: a r k m i c r o e l e c t r o n i c s c o . , l t d ? s products are no t a u th oriz ed for use as crit ic al com ponents i n life devi ces or sy stem s w ithout the ex press ed w r it ten ap p r oval of a r k m i c r o e l e c t r o n i c s c o . , l t d . a s used herei n : 1. life su pp ort d e vi ces or sy ste m s are devi ce s or system s which: a. are i n te nd ed f o r sur g ica l im pla n t in to th e hum an body , b. supp ort or sus t ai n l i fe, c. whose fail ure to perform wh en properly us ed i n accor da n ce w ith instr u cti ons for use d pro v id ed i n the lab e li ng , ca n be reas on ab ly exp ect ed to re sult in sig n ifi c ant in jury t o t h e user . 2. a criti cal c o m ponen t is a n y com p one nt is any c o m pone nt of a life su pp ort d e vi ce or sy ste m w hose failu re to perform can be reas onabl y expec t e d to cause the fa il ure o f t h e li fe su pp o r t devi ce or syste m , or t o af fect its safe ty or ef fecti v eness.

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